GENxplor R&D MBE System
Industry’s most advanced, high performance R&D system chosen by leading researchers
The GENxplor庐 R&D MBE System, awared the CSindustry Award for compound semiconductor manufacturing, uses 魅影直播’s proven 3″ growth chamber design and features unmatched process flexibility – perfect for materials research on emerging technologies such as UV LEDs, high-efficiency solar cell and high-temperature superconductors. Its efficient, single frame design combines all vacuum hardware with on-board electronics to make it up to 40% smaller than other MBE systems, saving valuable lab space.聽 Because the manual system is integrated on a single frame, installation time is reduced.聽 The open architecture design on the GENxplor also improves ease-of-use, provides convenient access to effusion cells and allows easier serviceability when compared to other MBE systems.
- High quality epitaxial layers on substrates up to 3″ in diameter
- Extreme E-beam temperature heater (>1850掳C)
- Unique, single frame architecture improves ease-of-use, provides convenient source access and enhanced serviceablility
- Efficient, all-in-one design combines manual system with on-board electronics for 40 percent lab space savings compared to other MBE systems
- Ideal for cutting-edge research on a wide variety of materials including GaAs, nitrides and oxides
- Molly庐 software integrates easy recipe writing, automated growth control and always-on data recording
- Optional Nova鈩� ultra high temperature substrate heater for proven performance at 1850掳
- Direct scalability to GEN20鈩�, GEN200庐 and GEN2000庐 MBE systems
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