The Propel 300mm fully automated single wafer cluster system is the only industry proven GaN MOCVD tool that enables production of 5G RF, Photonic and advanced CMOS devices on 300mm substrates.

Featuring a single-wafer reactor platform, the Propel 300mm system is capable of producing best-in-class, high quality epitaxy films on 300mm wafers with exceptional uniformity, repeatability and yield. The Propel 300mm System is configurable with up to 3 modular cluster chambers and offers automated cassette to cassette handling for maximum flexibility and productivity.

The single-wafer reactor is based on ÷ČÓ°Ö±²„ā€™s leading TurboDiscĀ® design including the IsoFlange and SymmHeat technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from the ÷ČÓ°Ö±²„ single wafer reactor Propel and Propel HVM systems to the Propel 300mm GaN MOCVD system for fast development to production.

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÷ČÓ°Ö±²„ā€™s Propel HVM GaN MOCVD System is designed as a unique, high volume manufacturing single wafer reactor cluster system for GaN-based Power, RF and photonics devices. Featuring a single-wafer reactor platform, capable of producing best-in-class high quality epitaxy film performance on 150 and 200mm wafers for exceptional uniformity, repeatability and yield. The Propel HVM system can be configurable up to 6 modular cluster chambers for maximum productivity and flexibility that is ideal for customers foundry or IDM business.

The single-wafer reactor is based on ÷ČÓ°Ö±²„ā€™s leading TurboDiscĀ® design with breakthrough technologies, including the IsoFlange and SymmHeat , that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from ÷ČÓ°Ö±²„’s single wafer reactor Propel and K465i systems to the Propel HVM GaN MOCVD platform for fast development to production cycles

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÷ČÓ°Ö±²„ā€™s Propel MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2ā€, 3×4ā€, 1×6ā€ and 1×8ā€ on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on ÷ČÓ°Ö±²„ā€™s leading TurboDiscĀ® design including the IsoFlange and SymmHeat technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from ÷ČÓ°Ö±²„ D180, K465i or MaxBright systems to the Propel GaN MOCVD platform.

Access basic process information on how to grow a GaN HEMT structure on a ÷ČÓ°Ö±²„Ā® PropelĀ® TurboDiscĀ® MOCVD tool on a 200mm (8ā€) Silicon substrate. This information is not designed, intended, recommended, nor authorized for use in any type of commercial system or application.

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Leading-Edge Performance with Maximum Capital Efficiency & Footprint Savings

÷ČÓ°Ö±²„ā€™s EPIKĀ® 868 is the LED industryā€™s highest performance MOCVD system that enables superior uniformity and repeatability with low defectivity. Available in a four-reactor configurations, EPIK 868 features breakthrough technologies including the proprietary IsoFlange and TruHeat technologies that provide laminar flow and uniform temperature profile across the entire wafer carrier. These technological innovations drive higher yields required for mini and micro LEDs. Inherent in EPIK 868 is the TurboDiscĀ® technology which enables highest system availability and uptime. Designed for mass production, EPIK 868 high capacity carrier accommodates multiple 4ā€ or 6ā€ wafer sizes for the lowest cost of ownership. Customers can easily transfer processes from existing TurboDisc systems to the new EPIK 868 MOCVD platform for quick-start production of high quality mini and micro LEDs.

• Excellent uniformity with low defectivity
• Compact cluster architecture
• High throughput architecture for maximum production

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Designed to advance next generation devices

VCSELS

• 3D Sensing
• LiDAR
• High Speed Data Communication

Edge-Emitting Lasers

• Advanced Optical Communications
• Silicon Photonics

Mini and MicroLEDs

• 4K and 8K Television Displays
• Smartphones
• Wearable Devices
• AR/VR (Augmented Reality / Virtual Reality)

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